Description
The QA3118M6N comprises two N‑channel enhancement‑mode MOSFETs in one package. It is intended for applications requiring efficient switching and compact footprint, such as DC‑DC converters, power management, or load switching circuits. The device supports a drain‑source breakdown voltage of ~30 V, and is engineered for relatively high current operation with moderate on‑resistance and switching characteristics. The datasheet lists performance metrics such as gate charge, switching times, leakage currents, and thermal limits.
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