Description
The AO4423 uses advanced trench MOSFET technology to deliver low on‑resistance with low gate charge, making it suitable for power switching, load switching, and PWM applications. It is specified with a drain‑source voltage (V_DS) of –30 V (i.e. up to 30 V in the reverse polarity sense for a P‑channel device) and has a maximum continuous drain current rating around –17 A (depending on conditions). Its on‑resistance (R_DS(on)) is specified as low as ~6.2 mΩ at V_GS = –20 V, or somewhat higher (7.2 mΩ) at V_GS = –1. It also feature power dissipation (3.1 W under ambient conditions) and thermal limits. The device is considered “obsolete” or out of active production according to some listings.
Because of its relatively high current and low R_DS(on), AO4423 is often used where a P‑channel MOSFET is needed for switching or high side transistor roles in DC power regulation circuits or reverse polarity protection circuits.
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