Description
The RT8207P provides a complete power solution for memory subsystems in notebook or embedded platforms, combining switching regulation and linear tracking in one device.
Key Functional Blocks & Performance
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Buck Controller (VDDQ)
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Uses constant‑on‑time PWM control for fast transient response (≈ 100 ns)
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Fixed output modes for DDRII (1.8 V) and DDRIII (1.5 V), or adjustable from ~0.75 V to 3.3 V to support LPDDR / DDRIV voltages
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Highly accurate regulation: ~1 % over line and load
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Resistor-programmable current limit (via low-side R_DS(on) sensing)
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Input voltage range: ~4.5 V to 26 V
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Frequency programmable via external resistor
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Over-voltage / under-voltage protection, internal current limit ramp & soft-start
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Power‑Good indicator output
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Drives large synchronous-rectifier MOSFETs
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Tracking LDO / Termination (VTT / VTTREF)
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Capable of sink and source up to 1.5 A
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Buffered low-noise reference (VTTREF) output (~10 mA)
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External input option to reduce power loss
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Integrated divider to track ½ × VDDQ for VTT / VTTREF
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Remote sensing input (VTTSNS) for accurate regulation
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Tight accuracy (~±20 mV)
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Sleep / Power-Down Behavior
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In S3 (sleep to RAM): VDDQ and VTTREF stay on; VTT goes into High‑Z (disabled)
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In S4 / S5 (soft-off states): VDDQ, VTT, and VTTREF are all discharged / disabled
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Discharge is handled internally via the LDO transistor path; VTT tracks half of VDDQ during discharge
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Protection & Safety
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Over-current protection (cycle-by-cycle current limiting)
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Over-voltage / under-voltage protection
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Thermal shutdown
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Soft-start and current ramp during startup to avoid overshoot
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Latch-off or automatic recovery behavior depending on fault type
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Package & Physical
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Offered in WQFN‑20L 3 × 3 mm package
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Operating ambient temperature range typical of notebook electronics
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No Return / No Exchange Policy / No Warranty.
Please check the model number and match it with your Product.
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