Description
The 87312E is a high‑performance dual N‑channel enhancement‑mode MOSFET designed for compact, low‑voltage power systems. Each channel supports a drain–source voltage (V<sub>DS</sub>) of 30 V and continuous drain current in the range of ~27 A under typical conditions. Its very low on‑resistance—on the order of tens of milliohms at moderate gate drive voltages—reduces conduction losses and improves system efficiency.
Housed in an ultra‑compact 3.3 × 3.3 mm SON‑style package, the 87312E is optimized for space‑constrained board layouts such as laptop/adapter input protection, battery management modules, and compact DC‑DC converters. The dual‑channel common‑source configuration allows one footprint to handle more switching stages or parallel paths, reducing component count and simplifying layout.
Key features include:
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Dual N‑channel MOSFET configuration in a single package
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V<sub>DS</sub> rating: 30 V
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Continuous drain current per channel: ~27 A (depending on thermal and layout conditions)
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Ultra‑low R<sub>DS(on)</sub>, supporting efficient low‑voltage power switching
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Compact SMD package for high‑density applications
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Suitable for battery‑powered devices, laptop power stages, and portable electronics
Whether you’re designing a high‑efficiency buck converter, a high‑side switching stage, or a compact power‑input protection circuit, the 87312E offers a reliable solution combining high current capacity, low losses, and minimal footprint.
Please Note:
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No Returns, Exchanges, or Warranty available.
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Kindly verify the model number and ensure it matches your product before placing an order.
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We guarantee premium quality.
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All items are thoroughly inspected prior to shipping.
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