Description
The FDMC8884 is a high‑performance N‑Channel MOSFET designed for power‑management, DC–DC converters, and load switching applications. It offers a good balance between voltage rating, current handling, and low on‑resistance. The device is packaged in a compact MLP 3.3 × 3.3 (8‑lead) form, making it suitable for high-density circuit designs.
With a 30 V drain‑source voltage (V<sub>DS</sub>), this MOSFET can support moderate currents while maintaining efficiency. Its low on‑resistance characteristics help reduce conduction losses in your application.
✅ Key Features & Specifications
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Type: N‑Channel MOSFET
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V<sub>DS</sub> (Drain‑Source Voltage): 30 V
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Continuous Drain Current (I<sub>D</sub>): 9 A (ambient), 15 A (case)
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On‑Resistance (R<sub>DS(on)</sub>):
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~19 mΩ at V<sub>GS</sub> = 10 V
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~30 mΩ at V<sub>GS</sub> = 4.5 V
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Gate Threshold Voltage (V<sub>GS(th)</sub>): ~1.4 – 2.5 V
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Total Gate Charge (Q<sub>g</sub>): ~10‑14 nC
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Capacitances:
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Input (C<sub>iss</sub>): ~485–685 pF
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Output (C<sub>oss</sub>): ~110‑150 pF
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Reverse transfer (C<sub>rss</sub>): ~76‑115 pF
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Switching Characteristics:
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Turn‑on & rise delay: a few nanoseconds
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Turn‑off & fall delay: tens of nanoseconds
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Power Dissipation: 2.3 W (ambient), 18 W (case)
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Operating Temperature Range: –55 °C to +150 °C
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Package: MLP 3.3 × 3.3, 8 leads (compact SMT)
🔹 Applications
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DC–DC converters (buck / boost)
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Power management modules
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Load switching
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Notebook / portable electronics
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Battery protection circuits
Please Note:
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No Returns, Exchanges, or Warranty available.
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Kindly verify the model number and ensure it matches your product before placing an order.
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We guarantee premium quality.
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All items are thoroughly inspected prior to shipping.
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