G5616B 5616B G5616BRZ1U RAM IC

Description

G5616B – Complete DDR Memory Power Solution: Synchronous Buck Controller + 3A LDO + Buffered Reference

The G5616B is a highly integrated power management IC designed for DDR, DDRII, and DDRIII memory systems. It combines a synchronous buck PWM controller for generating the VDDQ rail, a 3A sink/source linear regulator for the VTT rail, and a buffered reference output (VTTREF), all in a compact QFN-20 package.

This integration reduces component count and board space, making it ideal for notebook computers, CPU core supplies, and chipset/RAM supplies requiring voltages as low as 0.75V.

Key Features:

• Synchronous Buck Controller (VDDQ):

  • Input voltage range: 2V to 28V

  • Output voltage: 0.75V to 3.6V adjustable, or fixed 1.8V (DDRII) / 1.5V (DDRIII)

  • Ultra-high efficiency with no current-sense resistor (lossless ILIMIT)

  • Quasi-PWM with 100ns load-step response

  • Programmable switching frequency

  • Overvoltage protection (OVP) and undervoltage protection (UVP)

  • Drives large synchronous-rectifier FETs

  • Power-good indicator

• 3A LDO (VTT) & Buffered Reference (VTTREF):

  • Supports DDR (1.25V VTT), DDRII (0.9V VTT), and DDRIII (0.75V VTT) requirements

  • LDO input voltage range: 1.2V to 3.6V

  • Requires only 20µF ceramic VTT output capacitance

  • Supports high-Z in S3 and soft-off in S5

  • Integrated divider tracks 1/2 VDDQ for both VTT and VTTREF

  • Remote sensing (VTTSNS) with ±20mV accuracy for VTT and VTTREF

  • 10mA buffered reference (VTTREF)

  • Built-in soft-start to reduce LDO input surging current

  • Overcurrent protection of VTT output

  • Thermal shutdown protection

Applications:

• Notebook computers

• CPU core supply

• Chipset/RAM supply as low as 0.75V

• General-purpose DDR memory power solutions

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