Description
The AONH36334 is a high-efficiency dual N-Channel MOSFET designed for low-voltage, high-current switching in compact systems. With a drain-source voltage rating of 30V, it supports fast switching speeds, low gate charge, and excellent thermal performance, making it ideal for use in DC-DC converters, load switches, battery-powered devices, and general power management circuits.
Its compact DFN 3×3 8-lead package allows for high power density and space-saving PCB layouts, ideal for modern electronics.
✅ Key Features:
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Channel Type: Dual N-Channel
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Drain-Source Voltage (V<sub>DS</sub>): 30V
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Continuous Drain Current (I<sub>D</sub>): ~16A
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R<sub>DS(on)</sub>:
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~10.2 mΩ @ V<sub>GS</sub> = 10V
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~15.8 mΩ @ V<sub>GS</sub> = 4.5V
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Gate Threshold Voltage (V<sub>GS(th)</sub>): Up to ~2.2V
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Total Gate Charge (Q<sub>g</sub>):
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~3.9 nC @ 4.5V
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~8 nC @ 10V
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Capacitances:
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Input (C<sub>iss</sub>): ~485 pF
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Output (C<sub>oss</sub>): ~235 pF
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Reverse Transfer (C<sub>rss</sub>): ~32 pF
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Switching Times:
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Turn-On Delay: ~3.5 ns
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Turn-Off Delay: ~16.3 ns
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Package: DFN 3×3-8L
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Max Operating Junction Temp: 150°C
🔹 Applications:
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Synchronous buck converters
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Load switching
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Battery management systems
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Portable electronics
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Power rail control in embedded systems
Please Note:
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No Returns, Exchanges, or Warranty available.
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Kindly verify the model number and ensure it matches your product before placing an order.
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We guarantee premium quality.
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All items are thoroughly inspected prior to shipping.
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