AO4409 4409 SOP-8 Sic MOSFET P-Channel -15A

Description

The AON4409 is a high-efficiency P‑Channel enhancement-mode MOSFET, rated for 30 V drain‑source voltage and a continuous current of 15 A. It features low on-resistance, fast switching performance, and a compact SOIC‑8 surface-mount package.

Designed for use in power management, load switching, reverse battery protection, and PWM applications, this MOSFET offers reliable performance in a variety of circuits. Its electrical characteristics include a gate threshold voltage around 2.7 V, low R_DS(on) (≈ 7.5 mΩ @ V_GS = –10 V), and moderate gate charge, making it a balanced choice for both control and power switching operations.

✅ Key Features & Specifications

• Channel Type: P‑Channel

• Drain‑Source Voltage (V_DS): –30 V

• Continuous Drain Current: 15 A

• On‑Resistance (R_DS(on)): ~7.5 mΩ @ V_GS = –10 V

• Gate Threshold Voltage (V_GS(th)): ~2.7 V

• Maximum Gate Voltage: ±20 V

• Input Capacitance (C_iss): ~6400 pF

• Power Dissipation: ~3.1 W (ambient)

• Operating Temperature Range: –55 °C to +150 °C

• Package: SOIC‑8

Please Note:

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