Description
The AON4409 is a high-efficiency P‑Channel enhancement-mode MOSFET, rated for 30 V drain‑source voltage and a continuous current of 15 A. It features low on-resistance, fast switching performance, and a compact SOIC‑8 surface-mount package.
Designed for use in power management, load switching, reverse battery protection, and PWM applications, this MOSFET offers reliable performance in a variety of circuits. Its electrical characteristics include a gate threshold voltage around 2.7 V, low R<sub>DS(on)</sub> (≈ 7.5 mΩ @ V<sub>GS</sub> = –10 V), and moderate gate charge, making it a balanced choice for both control and power switching operations.
✅ Key Features & Specifications
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Channel Type: P‑Channel
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Drain‑Source Voltage (V<sub>DS</sub>): –30 V
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Continuous Drain Current: 15 A
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On‑Resistance (R<sub>DS(on)</sub>): ~7.5 mΩ @ V<sub>GS</sub> = –10 V
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Gate Threshold Voltage (V<sub>GS(th)</sub>): ~2.7 V
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Maximum Gate Voltage: ±20 V
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Input Capacitance (C<sub>iss</sub>): ~6400 pF
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Power Dissipation: ~3.1 W (ambient)
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Operating Temperature Range: –55 °C to +150 °C
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Package: SOIC‑8
Please Note:
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No Returns, Exchanges, or Warranty available.
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Kindly verify the model number and ensure it matches your product before placing an order.
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We guarantee premium quality.
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All items are thoroughly inspected prior to shipping.
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