Description
The P0603BDG is a high-current N‑Channel enhancement-mode MOSFET suited for switching and power‑management applications. It offers a drain‑source voltage rating of 30 V and can handle up to 75 A continuous current. With a low on-resistance (≈ 6.5 mΩ at V<sub>GS</sub> = 10 V), it helps reduce conduction losses in high-efficiency circuits.
The device is packaged in TO‑252 / DPAK form, which makes it robust and thermally manageable for surface-mount applications. Its characteristics include high power dissipation capacity, avalanche robustness, and logic-level gate drive compatibility.
✅ Key Features & Specifications
| Parameter | Value |
|---|---|
| V<sub>DS</sub> (Drain‑Source Voltage) | 30 V |
| Continuous Drain Current (I<sub>D</sub>) | 68 A (at 25 °C) |
| On‑Resistance (R<sub>DS(on)</sub>) | ~6.5 mΩ @ V<sub>GS</sub> = 10 V |
| Gate‑Source Voltage (V<sub>GS</sub>) | ±20 V max |
| Power Dissipation | ~50 W |
| Pulsed Drain Current (I<sub>DM</sub>) | ~170 A |
| Avalanche Current (I<sub>AS</sub>) | ~52 A |
| Junction / Storage Temperature | –55 °C to +150 °C |
| Package | TO‑252 / DPAK (surface mount) |
🔹 Applications
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DC–DC converters (buck, boost)
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Power switching modules
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Motor drivers and controllers
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High-current load switches
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Battery protection circuits
Please Note:
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No Returns, Exchanges, or Warranty available.
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Kindly verify the model number and ensure it matches your product before placing an order.
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We guarantee premium quality.
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All items are thoroughly inspected prior to shipping.
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